Laser-induced polarization-dependent photocrystallization of amorphous chalcogenide films
نویسندگان
چکیده
Irradiation of amorphous a-Se Ag I and a-Se films by linearly polarized He–Neand Arq ion-laser light was shown 70 15 15 to produce polycrystalline films with linear dichroism, the sign of which is determined by the polarization of the light. Photocrystallization of the films was confirmed by direct structural investigations. Thus, a new phenomenon, the effect of light polarization on the photocrystallization process and on the properties of resultant crystallized films was revealed. Photoinduced anisotropy in a-Se–Ag–I films was shown to have many peculiarities in comparison with that in the formerly studied films, for example, in AsSe films. q 1998 Elsevier Science B.V. All rights reserved.
منابع مشابه
Polarization-dependent, laser-induced anisotropic photocrystallization of some amorphous chalcogenide films
We report the observation of the influence of light polarization on the photocrystallization process and on the properties of crystallized films. Irradiation with linearly polarized He–Ne laser light results in the preparation of polycrystalline films with strong optical anisotropy ~dichroism!, the sign of which is determined by the direction of the electrical vector of light. The results obtai...
متن کاملPolarization-dependent laser crystallization of Se-containing amorphous chalcogenide films
We report about the observation of influence of the light polarization on the photocrystallization process in the Se Ag I , elementary Se and Se Te films. Irradiation with linearly polarized He–Ne and Arq laser light results in the 70 15 15 80 20 Ž . formation of polycrystalline films with strong optical anisotropy dichroism , the sign of which is determined by the direction of the electrical v...
متن کاملInvestigation of Chalcogenide Glassy Semiconductors in the Ben-gurion University (israel)
The study of chalcogenide glassy semiconductors (ChGS) in the Ben-Gurion University (Israel) started in early 1992 and was based on the results obtained in the A. F. Ioffe PhysicoTechnical Institute (St. Petersburg, Russia). Most investigations were performed in the following directions: structural transformations induced by short intense light pulses, photoinduced optical anisotropy, photoindu...
متن کاملGrayscale image recording on Ge2Sb2Te5 thin films through laser-induced structural evolution
Chalcogenide Ge2Sb2Te5 thin films have been widely exploited as binary bit recording materials in optical and non-volatile electronic information storage, where the crystalline and amorphous states are marked as the information bits "0" and "1", respectively. In this work, we demonstrate the use of Ge2Sb2Te5 thin films as multi-level grayscale image recording materials. High-resolution grayscal...
متن کاملAmorphous copper tungsten oxide with tunable band gaps
Related Articles Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge2Sb2Te5 chalcogenide from firstprinciple calculations J. Appl. Phys. 110, 063716 (2011) Pressure-induced phase transformations during femtosecond-laser doping of silicon J. Appl. Phys. 110, 053524 (2011) Effect of deposition parameters and semi-empirical relations between non-linear refractive index...
متن کامل